Atomic layer deposition and properties of ZrO(2)/Fe(2)O(3) thin films

Thin solid films consisting of ZrO(2) and Fe(2)O(3) were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO(2) were stabilized by Fe(2)O(3) doping. The number of alternating ZrO(2) and Fe(2)O(3) deposition cycles were varied in order to achieve films with different cation rat...

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Detalles Bibliográficos
Autores principales: Kalam, Kristjan, Seemen, Helina, Ritslaid, Peeter, Rähn, Mihkel, Tamm, Aile, Kukli, Kaupo, Kasikov, Aarne, Link, Joosep, Stern, Raivo, Dueñas, Salvador, Castán, Helena, García, Héctor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5789441/
https://www.ncbi.nlm.nih.gov/pubmed/29441257
http://dx.doi.org/10.3762/bjnano.9.14
Descripción
Sumario:Thin solid films consisting of ZrO(2) and Fe(2)O(3) were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO(2) were stabilized by Fe(2)O(3) doping. The number of alternating ZrO(2) and Fe(2)O(3) deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0.

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