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Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray a...

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Detalles Bibliográficos
Autores principales:	Lee, Cheng-Jung, Chang, Yu-Chi, Wang, Li-Wen, Wang, Yeong-Her
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793530/ https://www.ncbi.nlm.nih.gov/pubmed/29278374 http://dx.doi.org/10.3390/ma11010032

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