Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applica...

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Detalles Bibliográficos
Autores principales: Liu, Pan, Lin, Xiaoyang, Xu, Yong, Zhang, Boyu, Si, Zhizhong, Cao, Kaihua, Wei, Jiaqi, Zhao, Weisheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793545/
https://www.ncbi.nlm.nih.gov/pubmed/29283394
http://dx.doi.org/10.3390/ma11010047

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