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Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal...

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Detalles Bibliográficos
Autores principales: Yamada, Michihiro, Fujita, Yuichi, Yamada, Shinya, Sawano, Kentarou, Hamaya, Kohei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793648/
https://www.ncbi.nlm.nih.gov/pubmed/29342078
http://dx.doi.org/10.3390/ma11010150
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author Yamada, Michihiro
Fujita, Yuichi
Yamada, Shinya
Sawano, Kentarou
Hamaya, Kohei
author_facet Yamada, Michihiro
Fujita, Yuichi
Yamada, Shinya
Sawano, Kentarou
Hamaya, Kohei
author_sort Yamada, Michihiro
collection PubMed
description We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.
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spelling pubmed-57936482018-02-07 Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts Yamada, Michihiro Fujita, Yuichi Yamada, Shinya Sawano, Kentarou Hamaya, Kohei Materials (Basel) Article We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures. MDPI 2018-01-17 /pmc/articles/PMC5793648/ /pubmed/29342078 http://dx.doi.org/10.3390/ma11010150 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yamada, Michihiro
Fujita, Yuichi
Yamada, Shinya
Sawano, Kentarou
Hamaya, Kohei
Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title_full Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title_fullStr Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title_full_unstemmed Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title_short Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
title_sort spin absorption effect at ferromagnet/ge schottky-tunnel contacts
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793648/
https://www.ncbi.nlm.nih.gov/pubmed/29342078
http://dx.doi.org/10.3390/ma11010150
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