Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer

A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co(2)Fe(6)B(2) free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)](3)...

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Autores principales: Choi, Jin-Young, Lee, Dong-gi, Baek, Jong-Ung, Park, Jea-Gun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794754/
https://www.ncbi.nlm.nih.gov/pubmed/29391577
http://dx.doi.org/10.1038/s41598-018-20626-4
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author Choi, Jin-Young
Lee, Dong-gi
Baek, Jong-Ung
Park, Jea-Gun
author_facet Choi, Jin-Young
Lee, Dong-gi
Baek, Jong-Ung
Park, Jea-Gun
author_sort Choi, Jin-Young
collection PubMed
description A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co(2)Fe(6)B(2) free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)](3) layer and a new buffer layer of Co(0.6)/Pt(0.3)/Co(0.4). It had a TMR ratio of 180% and anisotropy exchange field (H(ex)) of 3.44 kOe after ex-situ annealing of 350 °C for 30 min under a vacuum below 10(−6) torr and a perpendicular magnetic field of 3 tesla, thereby ensuring a memory margin and avoiding read disturbance failures. Its high level of performance was due to the face-center-cubic crystallinity of the MgO tunneling barrier being significantly improved by decreasing its surface roughness (i.e., peak-to-valley length of 1.4 nm).
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spelling pubmed-57947542018-02-12 Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer Choi, Jin-Young Lee, Dong-gi Baek, Jong-Ung Park, Jea-Gun Sci Rep Article A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co(2)Fe(6)B(2) free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)](3) layer and a new buffer layer of Co(0.6)/Pt(0.3)/Co(0.4). It had a TMR ratio of 180% and anisotropy exchange field (H(ex)) of 3.44 kOe after ex-situ annealing of 350 °C for 30 min under a vacuum below 10(−6) torr and a perpendicular magnetic field of 3 tesla, thereby ensuring a memory margin and avoiding read disturbance failures. Its high level of performance was due to the face-center-cubic crystallinity of the MgO tunneling barrier being significantly improved by decreasing its surface roughness (i.e., peak-to-valley length of 1.4 nm). Nature Publishing Group UK 2018-02-01 /pmc/articles/PMC5794754/ /pubmed/29391577 http://dx.doi.org/10.1038/s41598-018-20626-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Choi, Jin-Young
Lee, Dong-gi
Baek, Jong-Ung
Park, Jea-Gun
Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title_full Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title_fullStr Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title_full_unstemmed Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title_short Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co(2)Fe(6)B(2) Free Layer using a Single SyAF [Co/Pt](n) Layer
title_sort double mgo-based perpendicular magnetic-tunnel-junction spin-valve structure with a top co(2)fe(6)b(2) free layer using a single syaf [co/pt](n) layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794754/
https://www.ncbi.nlm.nih.gov/pubmed/29391577
http://dx.doi.org/10.1038/s41598-018-20626-4
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