Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements

In this study, we proposed a theoretical model for one-dimensional semiconductor nanowires (NWs), taking account of the defect-related electrical transport process. The maximum emission current density was calculated by considering the influence of Joule heating, using a one-dimensional heat equatio...

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Autores principales: Lin, Zufang, Zhao, Peng, Ye, Peng, Chen, Yicong, Gan, Haibo, She, Juncong, Deng, Shaozhi, Xu, Ningsheng, Chen, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794980/
https://www.ncbi.nlm.nih.gov/pubmed/29391554
http://dx.doi.org/10.1038/s41598-018-20575-y
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author Lin, Zufang
Zhao, Peng
Ye, Peng
Chen, Yicong
Gan, Haibo
She, Juncong
Deng, Shaozhi
Xu, Ningsheng
Chen, Jun
author_facet Lin, Zufang
Zhao, Peng
Ye, Peng
Chen, Yicong
Gan, Haibo
She, Juncong
Deng, Shaozhi
Xu, Ningsheng
Chen, Jun
author_sort Lin, Zufang
collection PubMed
description In this study, we proposed a theoretical model for one-dimensional semiconductor nanowires (NWs), taking account of the defect-related electrical transport process. The maximum emission current density was calculated by considering the influence of Joule heating, using a one-dimensional heat equation. The field emission properties of individual CuO NWs with different electrical properties were studied using an in situ experimental technique. The experimental results for maximum emission current density agreed well with the theoretical predictions and suggested that multiple conduction mechanisms were active. These may be induced by the concentration of defects in the CuO NW. The concentration of defects and the transport mechanisms were found to be key factors influencing the maximum field emission current density of the semiconductor NW. As is limited by the change of resistivity with temperature, only thermal runaway can trigger breakdown in CuO NWs.
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spelling pubmed-57949802018-02-12 Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements Lin, Zufang Zhao, Peng Ye, Peng Chen, Yicong Gan, Haibo She, Juncong Deng, Shaozhi Xu, Ningsheng Chen, Jun Sci Rep Article In this study, we proposed a theoretical model for one-dimensional semiconductor nanowires (NWs), taking account of the defect-related electrical transport process. The maximum emission current density was calculated by considering the influence of Joule heating, using a one-dimensional heat equation. The field emission properties of individual CuO NWs with different electrical properties were studied using an in situ experimental technique. The experimental results for maximum emission current density agreed well with the theoretical predictions and suggested that multiple conduction mechanisms were active. These may be induced by the concentration of defects in the CuO NW. The concentration of defects and the transport mechanisms were found to be key factors influencing the maximum field emission current density of the semiconductor NW. As is limited by the change of resistivity with temperature, only thermal runaway can trigger breakdown in CuO NWs. Nature Publishing Group UK 2018-02-01 /pmc/articles/PMC5794980/ /pubmed/29391554 http://dx.doi.org/10.1038/s41598-018-20575-y Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Lin, Zufang
Zhao, Peng
Ye, Peng
Chen, Yicong
Gan, Haibo
She, Juncong
Deng, Shaozhi
Xu, Ningsheng
Chen, Jun
Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title_full Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title_fullStr Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title_full_unstemmed Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title_short Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
title_sort maximum field emission current density of cuo nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5794980/
https://www.ncbi.nlm.nih.gov/pubmed/29391554
http://dx.doi.org/10.1038/s41598-018-20575-y
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