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Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas
In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5795843/ https://www.ncbi.nlm.nih.gov/pubmed/29295573 http://dx.doi.org/10.3390/s18010037 |
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author | Kuo, Chin-Guo Chen, Jung-Hsuan Chao, Yi-Chieh Chen, Po-Lin |
author_facet | Kuo, Chin-Guo Chen, Jung-Hsuan Chao, Yi-Chieh Chen, Po-Lin |
author_sort | Kuo, Chin-Guo |
collection | PubMed |
description | In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10(19) cm(−3) and 24.7 cm(2)∙V(−1)∙s(−1) respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm. |
format | Online Article Text |
id | pubmed-5795843 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-57958432018-02-13 Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas Kuo, Chin-Guo Chen, Jung-Hsuan Chao, Yi-Chieh Chen, Po-Lin Sensors (Basel) Article In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10(19) cm(−3) and 24.7 cm(2)∙V(−1)∙s(−1) respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm. MDPI 2017-12-25 /pmc/articles/PMC5795843/ /pubmed/29295573 http://dx.doi.org/10.3390/s18010037 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kuo, Chin-Guo Chen, Jung-Hsuan Chao, Yi-Chieh Chen, Po-Lin Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title | Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title_full | Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title_fullStr | Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title_full_unstemmed | Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title_short | Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas |
title_sort | fabrication of a p3ht-zno nanowires gas sensor detecting ammonia gas |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5795843/ https://www.ncbi.nlm.nih.gov/pubmed/29295573 http://dx.doi.org/10.3390/s18010037 |
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