Structural characterisation of high-mobility Cd(3)As(2) films crystallised on SrTiO(3)

Cd(3)As(2) has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd(3)As(2) films grown on SrTiO(3) substrates by solid-phase epitaxy at high temperatures up to 600 °C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO(3) substrate, producing (112)-oriented Cd(3)As(2) films exhibiting high crystallinity with a rocking-curve width of 0.02° and a high electron mobility exceeding 30,000 cm(2)/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd(3)As(2) enable a unique approach for fabricating high-quality Cd(3)As(2) films and elucidating quantum transport by back gating through the SrTiO(3) substrate.