Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices

Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent...

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Detalles Bibliográficos
Autores principales: Zarudnyi, Konstantin, Mehonic, Adnan, Montesi, Luca, Buckwell, Mark, Hudziak, Stephen, Kenyon, Anthony J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2018
Materias:
Neuroscience
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5809439/
https://www.ncbi.nlm.nih.gov/pubmed/29472837
http://dx.doi.org/10.3389/fnins.2018.00057

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5809439/
https://www.ncbi.nlm.nih.gov/pubmed/29472837
http://dx.doi.org/10.3389/fnins.2018.00057

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