Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin transfer torque and high thermal stability, along with a continuous red...

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Detalles Bibliográficos
Autores principales: Watanabe, K., Jinnai, B., Fukami, S., Sato, H., Ohno, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813113/
https://www.ncbi.nlm.nih.gov/pubmed/29445169
http://dx.doi.org/10.1038/s41467-018-03003-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813113/
https://www.ncbi.nlm.nih.gov/pubmed/29445169
http://dx.doi.org/10.1038/s41467-018-03003-7

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