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Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin transfer torque and high thermal stability, along with a continuous red...

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Detalles Bibliográficos
Autores principales:	Watanabe, K., Jinnai, B., Fukami, S., Sato, H., Ohno, H.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5813113/ https://www.ncbi.nlm.nih.gov/pubmed/29445169 http://dx.doi.org/10.1038/s41467-018-03003-7

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