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Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

[Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid sta...

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Autores principales: Balazs, Daniel M., Rizkia, Nisrina, Fang, Hong-Hua, Dirin, Dmitry N., Momand, Jamo, Kooi, Bart J., Kovalenko, Maksym V., Loi, Maria Antonietta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5814956/
https://www.ncbi.nlm.nih.gov/pubmed/29368501
http://dx.doi.org/10.1021/acsami.7b16882
_version_ 1783300436533444608
author Balazs, Daniel M.
Rizkia, Nisrina
Fang, Hong-Hua
Dirin, Dmitry N.
Momand, Jamo
Kooi, Bart J.
Kovalenko, Maksym V.
Loi, Maria Antonietta
author_facet Balazs, Daniel M.
Rizkia, Nisrina
Fang, Hong-Hua
Dirin, Dmitry N.
Momand, Jamo
Kooi, Bart J.
Kovalenko, Maksym V.
Loi, Maria Antonietta
author_sort Balazs, Daniel M.
collection PubMed
description [Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.
format Online
Article
Text
id pubmed-5814956
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-58149562018-02-20 Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal Balazs, Daniel M. Rizkia, Nisrina Fang, Hong-Hua Dirin, Dmitry N. Momand, Jamo Kooi, Bart J. Kovalenko, Maksym V. Loi, Maria Antonietta ACS Appl Mater Interfaces [Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community. American Chemical Society 2018-01-25 2018-02-14 /pmc/articles/PMC5814956/ /pubmed/29368501 http://dx.doi.org/10.1021/acsami.7b16882 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle Balazs, Daniel M.
Rizkia, Nisrina
Fang, Hong-Hua
Dirin, Dmitry N.
Momand, Jamo
Kooi, Bart J.
Kovalenko, Maksym V.
Loi, Maria Antonietta
Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title_full Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title_fullStr Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title_full_unstemmed Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title_short Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
title_sort colloidal quantum dot inks for single-step-fabricated field-effect transistors: the importance of postdeposition ligand removal
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5814956/
https://www.ncbi.nlm.nih.gov/pubmed/29368501
http://dx.doi.org/10.1021/acsami.7b16882
work_keys_str_mv AT balazsdanielm colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT rizkianisrina colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT fanghonghua colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT dirindmitryn colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT momandjamo colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT kooibartj colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT kovalenkomaksymv colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval
AT loimariaantonietta colloidalquantumdotinksforsinglestepfabricatedfieldeffecttransistorstheimportanceofpostdepositionligandremoval