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Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal
[Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid sta...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2018
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5814956/ https://www.ncbi.nlm.nih.gov/pubmed/29368501 http://dx.doi.org/10.1021/acsami.7b16882 |
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author | Balazs, Daniel M. Rizkia, Nisrina Fang, Hong-Hua Dirin, Dmitry N. Momand, Jamo Kooi, Bart J. Kovalenko, Maksym V. Loi, Maria Antonietta |
author_facet | Balazs, Daniel M. Rizkia, Nisrina Fang, Hong-Hua Dirin, Dmitry N. Momand, Jamo Kooi, Bart J. Kovalenko, Maksym V. Loi, Maria Antonietta |
author_sort | Balazs, Daniel M. |
collection | PubMed |
description | [Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community. |
format | Online Article Text |
id | pubmed-5814956 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | American
Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-58149562018-02-20 Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal Balazs, Daniel M. Rizkia, Nisrina Fang, Hong-Hua Dirin, Dmitry N. Momand, Jamo Kooi, Bart J. Kovalenko, Maksym V. Loi, Maria Antonietta ACS Appl Mater Interfaces [Image: see text] Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community. American Chemical Society 2018-01-25 2018-02-14 /pmc/articles/PMC5814956/ /pubmed/29368501 http://dx.doi.org/10.1021/acsami.7b16882 Text en Copyright © 2018 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes. |
spellingShingle | Balazs, Daniel M. Rizkia, Nisrina Fang, Hong-Hua Dirin, Dmitry N. Momand, Jamo Kooi, Bart J. Kovalenko, Maksym V. Loi, Maria Antonietta Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal |
title | Colloidal
Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors:
The Importance of Postdeposition Ligand Removal |
title_full | Colloidal
Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors:
The Importance of Postdeposition Ligand Removal |
title_fullStr | Colloidal
Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors:
The Importance of Postdeposition Ligand Removal |
title_full_unstemmed | Colloidal
Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors:
The Importance of Postdeposition Ligand Removal |
title_short | Colloidal
Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors:
The Importance of Postdeposition Ligand Removal |
title_sort | colloidal
quantum dot inks for single-step-fabricated field-effect transistors:
the importance of postdeposition ligand removal |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5814956/ https://www.ncbi.nlm.nih.gov/pubmed/29368501 http://dx.doi.org/10.1021/acsami.7b16882 |
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