Cargando…

Iodine insertion and dispersion of refractive index in organic single crystal semiconductor

Insertion of halogens such as bromine or iodine affects the electronic polarizability of ions and the local field inside the medium, and thus modifies the refractive index. Acquiring precise knowledge of the dispersion of refractive index and ultimately tailoring conventional semiconductors for wide...

Descripción completa

Detalles Bibliográficos
Autores principales: Kwon, Seonho, Bae, Junwan, Lee, I. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5820369/
https://www.ncbi.nlm.nih.gov/pubmed/29463852
http://dx.doi.org/10.1038/s41598-018-21632-2
_version_ 1783301352424734720
author Kwon, Seonho
Bae, Junwan
Lee, I. J.
author_facet Kwon, Seonho
Bae, Junwan
Lee, I. J.
author_sort Kwon, Seonho
collection PubMed
description Insertion of halogens such as bromine or iodine affects the electronic polarizability of ions and the local field inside the medium, and thus modifies the refractive index. Acquiring precise knowledge of the dispersion of refractive index and ultimately tailoring conventional semiconductors for wide-range refractive index control have been a vital issue to resolve before realizing advanced organic optoelectronic devices. In this report, dispersions of the refractive index of a single crystal tetramethyltetraselenafulvalene [C(10)H(12)Se(4)] (TMTSF) are thoroughly studied from broadband interference modulations of photoluminescence (PL) spectra at various temperatures and doping levels. A large enhancement of the refractive index, more than 20% of the intrinsic value, is achieved with inclusion of a small composition of iodide ions, while the structural and optical properties remain mostly intact. Nearly temperature independent dispersion of the refractive index suggests that, unlike most polymers in which the thermal expansion coefficient dominates over the change of polarizability with temperature, the latter enhances significantly and may become more or less comparable to the thermal expansion coefficient given by 1.71 × 10(−4)/K, when single crystal TMTSF is doped by iodine.
format Online
Article
Text
id pubmed-5820369
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-58203692018-02-26 Iodine insertion and dispersion of refractive index in organic single crystal semiconductor Kwon, Seonho Bae, Junwan Lee, I. J. Sci Rep Article Insertion of halogens such as bromine or iodine affects the electronic polarizability of ions and the local field inside the medium, and thus modifies the refractive index. Acquiring precise knowledge of the dispersion of refractive index and ultimately tailoring conventional semiconductors for wide-range refractive index control have been a vital issue to resolve before realizing advanced organic optoelectronic devices. In this report, dispersions of the refractive index of a single crystal tetramethyltetraselenafulvalene [C(10)H(12)Se(4)] (TMTSF) are thoroughly studied from broadband interference modulations of photoluminescence (PL) spectra at various temperatures and doping levels. A large enhancement of the refractive index, more than 20% of the intrinsic value, is achieved with inclusion of a small composition of iodide ions, while the structural and optical properties remain mostly intact. Nearly temperature independent dispersion of the refractive index suggests that, unlike most polymers in which the thermal expansion coefficient dominates over the change of polarizability with temperature, the latter enhances significantly and may become more or less comparable to the thermal expansion coefficient given by 1.71 × 10(−4)/K, when single crystal TMTSF is doped by iodine. Nature Publishing Group UK 2018-02-20 /pmc/articles/PMC5820369/ /pubmed/29463852 http://dx.doi.org/10.1038/s41598-018-21632-2 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kwon, Seonho
Bae, Junwan
Lee, I. J.
Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title_full Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title_fullStr Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title_full_unstemmed Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title_short Iodine insertion and dispersion of refractive index in organic single crystal semiconductor
title_sort iodine insertion and dispersion of refractive index in organic single crystal semiconductor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5820369/
https://www.ncbi.nlm.nih.gov/pubmed/29463852
http://dx.doi.org/10.1038/s41598-018-21632-2
work_keys_str_mv AT kwonseonho iodineinsertionanddispersionofrefractiveindexinorganicsinglecrystalsemiconductor
AT baejunwan iodineinsertionanddispersionofrefractiveindexinorganicsinglecrystalsemiconductor
AT leeij iodineinsertionanddispersionofrefractiveindexinorganicsinglecrystalsemiconductor