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Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states

In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve...

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Detalles Bibliográficos
Autores principales: Lee, Joo-hyeon, Kim, Hyung-jun, Chang, Joonyeon, Han, Suk Hee, Koo, Hyun Cheol, Sayed, Shehrin, Hong, Seokmin, Datta, Supriyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5821859/
https://www.ncbi.nlm.nih.gov/pubmed/29467374
http://dx.doi.org/10.1038/s41598-018-21760-9
Descripción
Sumario:In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R(P)) and antiparallel (R(AP)) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R(AP(1)) > R(P) > R(AP(2)), up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.