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Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of non...

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Detalles Bibliográficos
Autores principales: Zhang, Jian, Deng, Ya, Hu, Xiao, Nshimiyimana, Jean Pierre, Liu, Siyu, Chi, Xiannian, Wu, Pei, Dong, Fengliang, Chen, Peipei, Chu, Weiguo, Zhou, Haiqing, Sun, Lianfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5827012/
https://www.ncbi.nlm.nih.gov/pubmed/29619307
http://dx.doi.org/10.1002/advs.201700588
Descripción
Sumario:Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10(−19) J bit(−1)), ON/OFF ratio of 10(5), stable switching ON operations, and over 30 h retention time in ambient conditions.