Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition meth...

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Detalles Bibliográficos
Autores principales: Wu, Chi-Chang, You, Hsin-Chiang, Lin, Yu-Hsien, Yang, Chia-Jung, Hsiao, Yu-Ping, Liao, Tun-Po, Yang, Wen-Luh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848962/
https://www.ncbi.nlm.nih.gov/pubmed/29425135
http://dx.doi.org/10.3390/ma11020265

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848962/
https://www.ncbi.nlm.nih.gov/pubmed/29425135
http://dx.doi.org/10.3390/ma11020265

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