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Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition meth...

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Detalles Bibliográficos
Autores principales:	Wu, Chi-Chang, You, Hsin-Chiang, Lin, Yu-Hsien, Yang, Chia-Jung, Hsiao, Yu-Ping, Liao, Tun-Po, Yang, Wen-Luh
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5848962/ https://www.ncbi.nlm.nih.gov/pubmed/29425135 http://dx.doi.org/10.3390/ma11020265

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