Cargando…

Latent Order in High-Angle Grain Boundary of GaN

We report the existence of latent order during core relaxation in the high-angle grain boundaries (GBs) of GaN films using atomic-resolution scanning transmission electron microscopy and ab initio density functional theory calculations. Core structures in the high-angle GBs are characterized by two...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yoon, Sangmoon, Yoo, Hyobin, Kang, Seoung-Hun, Kim, Miyoung, Kwon, Young-Kyun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5854581/ https://www.ncbi.nlm.nih.gov/pubmed/29545591 http://dx.doi.org/10.1038/s41598-018-22603-3

Ejemplares similares

Migration mechanism of a GaN bicrystalline grain boundary as a model system
por: Lee, Sung Bo, et al.
Publicado: (2016)

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
por: Jue, Miyeon, et al.
Publicado: (2015)

Investigation on Surface Polarization of Al(2)O(3)-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
por: Duan, Tian Li, et al.
Publicado: (2017)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
por: Barbagini, Francesca, et al.
Publicado: (2011)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Emission color-tuned light-emitting diode microarrays of nonpolar In(x)Ga(1–x)N/GaN multishell nanotube heterostructures
por: Hong, Young Joon, et al.
Publicado: (2015)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires
por: Yeo, Hwan-Seop, et al.
Publicado: (2020)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Amphoteric arsenic in GaN
por: Wahl, U, et al.
Publicado: (2007)

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms
por: Zając, Magdalena A, et al.
Publicado: (2023)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate
por: Kim, Jongmyeong, et al.
Publicado: (2019)

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
por: Nishio, Kengo, et al.
Publicado: (2018)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
por: Kim, Tae-Hyeon, et al.
Publicado: (2021)

Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
por: Do, Huy-Binh, et al.
Publicado: (2022)

Influencing Martensitic Transition in Epitaxial Ni-Mn-Ga-Co Films with Large Angle Grain Boundaries
por: Lünser, Klara, et al.
Publicado: (2020)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
por: Fernández-Garrido, Sergio, et al.
Publicado: (2019)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
por: Barchuk, Mykhailo, et al.
Publicado: (2017)

Thermal neutron transmutation doping of GaN semiconductors
por: Barber, R., et al.
Publicado: (2020)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Annealing of ion-implanted GaN
por: Burchard, A, et al.
Publicado: (1999)

Cannot write session to /tmp/vufind_sessions/sess_ui8gdna92hcksj8v770hr0jfc0