Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO(2) gas at room temperature and the cross-sensitiv...

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Detalles Bibliográficos
Autores principales: Knobelspies, Stefan, Bierer, Benedikt, Daus, Alwin, Takabayashi, Alain, Salvatore, Giovanni Antonio, Cantarella, Giuseppe, Ortiz Perez, Alvaro, Wöllenstein, Jürgen, Palzer, Stefan, Tröster, Gerhard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855925/
https://www.ncbi.nlm.nih.gov/pubmed/29373524
http://dx.doi.org/10.3390/s18020358

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5855925/
https://www.ncbi.nlm.nih.gov/pubmed/29373524
http://dx.doi.org/10.3390/s18020358

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