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Interferometric mapping of material properties using thermal perturbation
Optical phase changes induced by transient perturbations provide a sensitive measure of material properties. We demonstrate the high sensitivity and speed of such methods, using two interferometric techniques: quantitative phase imaging (QPI) in transmission and phase-resolved optical coherence tomo...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
National Academy of Sciences
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5856514/ https://www.ncbi.nlm.nih.gov/pubmed/29483276 http://dx.doi.org/10.1073/pnas.1712763115 |
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author | Goetz, Georges Ling, Tong Gupta, Tushar Kang, Seungbum Wang, Jenny Gregory, Patrick D. Park, B. Hyle Palanker, Daniel |
author_facet | Goetz, Georges Ling, Tong Gupta, Tushar Kang, Seungbum Wang, Jenny Gregory, Patrick D. Park, B. Hyle Palanker, Daniel |
author_sort | Goetz, Georges |
collection | PubMed |
description | Optical phase changes induced by transient perturbations provide a sensitive measure of material properties. We demonstrate the high sensitivity and speed of such methods, using two interferometric techniques: quantitative phase imaging (QPI) in transmission and phase-resolved optical coherence tomography (OCT) in reflection. Shot-noise–limited QPI can resolve energy deposition of about 3.4 mJ/cm(2) in a single pulse, which corresponds to 0.8 °C temperature rise in a single cell. OCT can detect deposition of 24 mJ/cm(2) energy between two scattering interfaces producing signals with about 30-dB signal-to-noise ratio (SNR), and 4.7 mJ/cm(2) when SNR is 45 dB. Both techniques can image thermal changes within the thermal confinement time, which enables accurate single-shot mapping of absorption coefficients even in highly scattering samples, as well as electrical conductivity and many other material properties in biological samples at cellular scale. Integration of the phase changes along the beam path helps increase sensitivity, and the signal relaxation time reveals the size of hidden objects. These methods may enable multiple applications, ranging from temperature-controlled retinal laser therapy or gene expression to mapping electric current density and characterization of semiconductor devices with rapid pump–probe measurements. |
format | Online Article Text |
id | pubmed-5856514 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | National Academy of Sciences |
record_format | MEDLINE/PubMed |
spelling | pubmed-58565142018-04-06 Interferometric mapping of material properties using thermal perturbation Goetz, Georges Ling, Tong Gupta, Tushar Kang, Seungbum Wang, Jenny Gregory, Patrick D. Park, B. Hyle Palanker, Daniel Proc Natl Acad Sci U S A PNAS Plus Optical phase changes induced by transient perturbations provide a sensitive measure of material properties. We demonstrate the high sensitivity and speed of such methods, using two interferometric techniques: quantitative phase imaging (QPI) in transmission and phase-resolved optical coherence tomography (OCT) in reflection. Shot-noise–limited QPI can resolve energy deposition of about 3.4 mJ/cm(2) in a single pulse, which corresponds to 0.8 °C temperature rise in a single cell. OCT can detect deposition of 24 mJ/cm(2) energy between two scattering interfaces producing signals with about 30-dB signal-to-noise ratio (SNR), and 4.7 mJ/cm(2) when SNR is 45 dB. Both techniques can image thermal changes within the thermal confinement time, which enables accurate single-shot mapping of absorption coefficients even in highly scattering samples, as well as electrical conductivity and many other material properties in biological samples at cellular scale. Integration of the phase changes along the beam path helps increase sensitivity, and the signal relaxation time reveals the size of hidden objects. These methods may enable multiple applications, ranging from temperature-controlled retinal laser therapy or gene expression to mapping electric current density and characterization of semiconductor devices with rapid pump–probe measurements. National Academy of Sciences 2018-03-13 2018-02-26 /pmc/articles/PMC5856514/ /pubmed/29483276 http://dx.doi.org/10.1073/pnas.1712763115 Text en Copyright © 2018 the Author(s). Published by PNAS. https://creativecommons.org/licenses/by-nc-nd/4.0/ This open access article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND) (https://creativecommons.org/licenses/by-nc-nd/4.0/) . |
spellingShingle | PNAS Plus Goetz, Georges Ling, Tong Gupta, Tushar Kang, Seungbum Wang, Jenny Gregory, Patrick D. Park, B. Hyle Palanker, Daniel Interferometric mapping of material properties using thermal perturbation |
title | Interferometric mapping of material properties using thermal perturbation |
title_full | Interferometric mapping of material properties using thermal perturbation |
title_fullStr | Interferometric mapping of material properties using thermal perturbation |
title_full_unstemmed | Interferometric mapping of material properties using thermal perturbation |
title_short | Interferometric mapping of material properties using thermal perturbation |
title_sort | interferometric mapping of material properties using thermal perturbation |
topic | PNAS Plus |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5856514/ https://www.ncbi.nlm.nih.gov/pubmed/29483276 http://dx.doi.org/10.1073/pnas.1712763115 |
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