Cargando…
Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
Autores principales: | Zallo, Eugenio, Cecchi, Stefano, Boschker, Jos E., Mio, Antonio M., Arciprete, Fabrizio, Privitera, Stefania, Calarco, Raffaella |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5859102/ https://www.ncbi.nlm.nih.gov/pubmed/29556097 http://dx.doi.org/10.1038/s41598-018-23156-1 |
Ejemplares similares
-
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
por: Zallo, Eugenio, et al.
Publicado: (2017) -
Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016) -
Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
por: Bragaglia, Valeria, et al.
Publicado: (2016) -
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys
por: Cecchi, Stefano, et al.
Publicado: (2022) -
Coincident-site lattice matching during van der Waals epitaxy
por: Boschker, Jos E., et al.
Publicado: (2015)