Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)

The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO(2) can be improved significantly with compression. Abnor...

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Autores principales: Shen, Wenshu, Ou, Tianji, Wang, Jia, Qin, Tianru, Zhang, Guozhao, Zhang, Xin, Han, Yonghao, Ma, Yanzhang, Gao, Chunxiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5865191/
https://www.ncbi.nlm.nih.gov/pubmed/29572527
http://dx.doi.org/10.1038/s41598-018-22965-8
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author Shen, Wenshu
Ou, Tianji
Wang, Jia
Qin, Tianru
Zhang, Guozhao
Zhang, Xin
Han, Yonghao
Ma, Yanzhang
Gao, Chunxiao
author_facet Shen, Wenshu
Ou, Tianji
Wang, Jia
Qin, Tianru
Zhang, Guozhao
Zhang, Xin
Han, Yonghao
Ma, Yanzhang
Gao, Chunxiao
author_sort Shen, Wenshu
collection PubMed
description The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO(2) can be improved significantly with compression. Abnormal variations in resistivity, relaxation frequency, and relative permittivity were observed at approximately 12.3 and 25.0 GPa, which can be attributed to pressure-induced tetragonal- orthorhombic-cubic structural transitions. The dielectric properties of the SnO(2) nanoparticles were found to be a function of pressure, and the dielectric response was dependent on frequency and pressure. The dielectric constant and loss tangent decreased with increasing frequency. Relaxation-type dielectric behaviour dominated at low frequencies. Whereas, modulus spectra indicated that charge carrier short-range motion dominated at high frequencies.
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spelling pubmed-58651912018-03-27 Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2) Shen, Wenshu Ou, Tianji Wang, Jia Qin, Tianru Zhang, Guozhao Zhang, Xin Han, Yonghao Ma, Yanzhang Gao, Chunxiao Sci Rep Article The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements and synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction of SnO(2) can be improved significantly with compression. Abnormal variations in resistivity, relaxation frequency, and relative permittivity were observed at approximately 12.3 and 25.0 GPa, which can be attributed to pressure-induced tetragonal- orthorhombic-cubic structural transitions. The dielectric properties of the SnO(2) nanoparticles were found to be a function of pressure, and the dielectric response was dependent on frequency and pressure. The dielectric constant and loss tangent decreased with increasing frequency. Relaxation-type dielectric behaviour dominated at low frequencies. Whereas, modulus spectra indicated that charge carrier short-range motion dominated at high frequencies. Nature Publishing Group UK 2018-03-23 /pmc/articles/PMC5865191/ /pubmed/29572527 http://dx.doi.org/10.1038/s41598-018-22965-8 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Shen, Wenshu
Ou, Tianji
Wang, Jia
Qin, Tianru
Zhang, Guozhao
Zhang, Xin
Han, Yonghao
Ma, Yanzhang
Gao, Chunxiao
Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title_full Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title_fullStr Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title_full_unstemmed Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title_short Effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline SnO(2)
title_sort effects of high pressure on the electrical resistivity and dielectric properties of nanocrystalline sno(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5865191/
https://www.ncbi.nlm.nih.gov/pubmed/29572527
http://dx.doi.org/10.1038/s41598-018-22965-8
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