Strain-induced high-temperature perovskite ferromagnetic insulator

Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO(3) single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high T(C) of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain–induced ferromagnetism which does not exist in bulk LaCoO(3). The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co(2+) defect concentration reaches about 10%. Significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes.