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Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide
In this paper, we investigate the synthesis of WSe(2) by chemical vapor deposition and study the current transport and device scaling of monolayer WSe(2). We found that the device characteristics of the back-gated WSe(2) transistors with thick oxides are very sensitive to the applied drain bias, esp...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5869716/ https://www.ncbi.nlm.nih.gov/pubmed/29588469 http://dx.doi.org/10.1038/s41598-018-23501-4 |