InAs/AlGaAs quantum dots for single-photon emission in a red spectral range

We report on comparative optical studies of InAs/Al(0.44)Ga(0.56)As quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spe...

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Detalles Bibliográficos
Autores principales: Rakhlin, M. V., Belyaev, K. G., Klimko, G. V., Mukhin, I. S., Kirilenko, D. A., Shubina, T. V., Ivanov, S. V., Toropov, A. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5871773/
https://www.ncbi.nlm.nih.gov/pubmed/29593301
http://dx.doi.org/10.1038/s41598-018-23687-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5871773/
https://www.ncbi.nlm.nih.gov/pubmed/29593301
http://dx.doi.org/10.1038/s41598-018-23687-7

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