Cargando…
Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode
Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of t...
Autores principales: | Alvarado Chavarin, Carlos, Strobel, Carsten, Kitzmann, Julia, Di Bartolomeo, Antonio, Lukosius, Mindaugas, Albert, Matthias, Bartha, Johann Wolfgang, Wenger, Christian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5872924/ https://www.ncbi.nlm.nih.gov/pubmed/29495480 http://dx.doi.org/10.3390/ma11030345 |
Ejemplares similares
-
Graphene Schottky Junction on Pillar Patterned Silicon Substrate
por: Luongo, Giuseppe, et al.
Publicado: (2019) -
Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene
por: Kitzmann, Julia, et al.
Publicado: (2016) -
Graphene-Based Electrodes for Silicon Heterojunction Solar Cell Technology
por: Torres, Ignacio, et al.
Publicado: (2021) -
Chemical Vapor Deposition
Growth of Graphene on 200
mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth
Mechanisms on Ge(110) and Ge(001)
por: Akhtar, Fatima, et al.
Publicado: (2023) -
Graphene with Ni-Grid as Semitransparent Electrode for Bulk Heterojunction Solar Cells (BHJ-SCs)
por: Dianetti, Martina, et al.
Publicado: (2022)