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Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)

Photoluminescence measurements in mono- and bilayer-MoS(2) on SiO(2) were undertaken to determine the thermal effect of the MoS(2)/SiO(2) interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS(2) were lower and weaker than those from bilayer MoS(2) at...

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Autores principales: Park, Youngsin, Chan, Christopher C. S., Taylor, Robert A., Kim, Yongchul, Kim, Nammee, Jo, Yongcheol, Lee, Seung W., Yang, Woochul, Im, Hyunsik, Lee, Geunsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5876333/
https://www.ncbi.nlm.nih.gov/pubmed/29599429
http://dx.doi.org/10.1038/s41598-018-23788-3
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author Park, Youngsin
Chan, Christopher C. S.
Taylor, Robert A.
Kim, Yongchul
Kim, Nammee
Jo, Yongcheol
Lee, Seung W.
Yang, Woochul
Im, Hyunsik
Lee, Geunsik
author_facet Park, Youngsin
Chan, Christopher C. S.
Taylor, Robert A.
Kim, Yongchul
Kim, Nammee
Jo, Yongcheol
Lee, Seung W.
Yang, Woochul
Im, Hyunsik
Lee, Geunsik
author_sort Park, Youngsin
collection PubMed
description Photoluminescence measurements in mono- and bilayer-MoS(2) on SiO(2) were undertaken to determine the thermal effect of the MoS(2)/SiO(2) interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS(2) were lower and weaker than those from bilayer MoS(2) at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.
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spelling pubmed-58763332018-04-02 Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2) Park, Youngsin Chan, Christopher C. S. Taylor, Robert A. Kim, Yongchul Kim, Nammee Jo, Yongcheol Lee, Seung W. Yang, Woochul Im, Hyunsik Lee, Geunsik Sci Rep Article Photoluminescence measurements in mono- and bilayer-MoS(2) on SiO(2) were undertaken to determine the thermal effect of the MoS(2)/SiO(2) interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS(2) were lower and weaker than those from bilayer MoS(2) at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer. Nature Publishing Group UK 2018-03-29 /pmc/articles/PMC5876333/ /pubmed/29599429 http://dx.doi.org/10.1038/s41598-018-23788-3 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Park, Youngsin
Chan, Christopher C. S.
Taylor, Robert A.
Kim, Yongchul
Kim, Nammee
Jo, Yongcheol
Lee, Seung W.
Yang, Woochul
Im, Hyunsik
Lee, Geunsik
Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title_full Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title_fullStr Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title_full_unstemmed Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title_short Temperature induced crossing in the optical bandgap of mono and bilayer MoS(2) on SiO(2)
title_sort temperature induced crossing in the optical bandgap of mono and bilayer mos(2) on sio(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5876333/
https://www.ncbi.nlm.nih.gov/pubmed/29599429
http://dx.doi.org/10.1038/s41598-018-23788-3
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