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Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)

The electronic structures of monolayer and bilayer SnSe(2) under pressure were investigated by using first-principles calculations including van der Waals interactions. For monolayer SnSe(2), the variation of electronic structure under pressure is controlled by pressure-dependent lattice parameters....

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Autores principales: Zou, Daifeng, Yu, Chuanbin, Li, Yuhao, Ou, Yun, Gao, Yongyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society Publishing 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5882711/
https://www.ncbi.nlm.nih.gov/pubmed/29657787
http://dx.doi.org/10.1098/rsos.171827
_version_ 1783311503895560192
author Zou, Daifeng
Yu, Chuanbin
Li, Yuhao
Ou, Yun
Gao, Yongyi
author_facet Zou, Daifeng
Yu, Chuanbin
Li, Yuhao
Ou, Yun
Gao, Yongyi
author_sort Zou, Daifeng
collection PubMed
description The electronic structures of monolayer and bilayer SnSe(2) under pressure were investigated by using first-principles calculations including van der Waals interactions. For monolayer SnSe(2), the variation of electronic structure under pressure is controlled by pressure-dependent lattice parameters. For bilayer SnSe(2), the changes in electronic structure under pressure are dominated by intralayer and interlayer atomic interactions. The n-type thermoelectric properties of monolayer and bilayer SnSe(2) under pressure were calculated on the basis of the semi-classical Boltzmann transport theory. It was found that the electrical conductivity of monolayer and bilayer SnSe(2) can be enhanced under pressure, and such dependence can be attributed to the pressure-induced changes of the Se–Sn antibonding states in conduction band. Finally, the doping dependence of power factors of n-type monolayer and bilayer SnSe(2) at three different pressures were estimated, and the results unveiled that thermoelectric performance of n-type monolayer and bilayer SnSe(2) can be improved by applying external pressure. This study benefits to understand the nature of the transport properties for monolayer and bilayer SnSe(2) under pressure, and it offers valuable insight for designing high-performance thermoelectric few-layered SnSe(2) through strain engineering induced by external pressure.
format Online
Article
Text
id pubmed-5882711
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher The Royal Society Publishing
record_format MEDLINE/PubMed
spelling pubmed-58827112018-04-13 Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2) Zou, Daifeng Yu, Chuanbin Li, Yuhao Ou, Yun Gao, Yongyi R Soc Open Sci Chemistry The electronic structures of monolayer and bilayer SnSe(2) under pressure were investigated by using first-principles calculations including van der Waals interactions. For monolayer SnSe(2), the variation of electronic structure under pressure is controlled by pressure-dependent lattice parameters. For bilayer SnSe(2), the changes in electronic structure under pressure are dominated by intralayer and interlayer atomic interactions. The n-type thermoelectric properties of monolayer and bilayer SnSe(2) under pressure were calculated on the basis of the semi-classical Boltzmann transport theory. It was found that the electrical conductivity of monolayer and bilayer SnSe(2) can be enhanced under pressure, and such dependence can be attributed to the pressure-induced changes of the Se–Sn antibonding states in conduction band. Finally, the doping dependence of power factors of n-type monolayer and bilayer SnSe(2) at three different pressures were estimated, and the results unveiled that thermoelectric performance of n-type monolayer and bilayer SnSe(2) can be improved by applying external pressure. This study benefits to understand the nature of the transport properties for monolayer and bilayer SnSe(2) under pressure, and it offers valuable insight for designing high-performance thermoelectric few-layered SnSe(2) through strain engineering induced by external pressure. The Royal Society Publishing 2018-03-28 /pmc/articles/PMC5882711/ /pubmed/29657787 http://dx.doi.org/10.1098/rsos.171827 Text en © 2018 The Authors. http://creativecommons.org/licenses/by/4.0/ Published by the Royal Society under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, provided the original author and source are credited.
spellingShingle Chemistry
Zou, Daifeng
Yu, Chuanbin
Li, Yuhao
Ou, Yun
Gao, Yongyi
Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title_full Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title_fullStr Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title_full_unstemmed Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title_short Pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer SnSe(2)
title_sort pressure-induced enhancement in the thermoelectric properties of monolayer and bilayer snse(2)
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5882711/
https://www.ncbi.nlm.nih.gov/pubmed/29657787
http://dx.doi.org/10.1098/rsos.171827
work_keys_str_mv AT zoudaifeng pressureinducedenhancementinthethermoelectricpropertiesofmonolayerandbilayersnse2
AT yuchuanbin pressureinducedenhancementinthethermoelectricpropertiesofmonolayerandbilayersnse2
AT liyuhao pressureinducedenhancementinthethermoelectricpropertiesofmonolayerandbilayersnse2
AT ouyun pressureinducedenhancementinthethermoelectricpropertiesofmonolayerandbilayersnse2
AT gaoyongyi pressureinducedenhancementinthethermoelectricpropertiesofmonolayerandbilayersnse2