Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors

We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coatin...

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Detalles Bibliográficos
Autores principales: Kim, Yeong-gyu, Tak, Young Jun, Kim, Hee Jun, Kim, Won-Gi, Yoo, Hyukjoon, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5882893/
https://www.ncbi.nlm.nih.gov/pubmed/29615757
http://dx.doi.org/10.1038/s41598-018-23892-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5882893/
https://www.ncbi.nlm.nih.gov/pubmed/29615757
http://dx.doi.org/10.1038/s41598-018-23892-4

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