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SIMS of Organic Materials—Interface Location in Argon Gas Cluster Depth Profiles Using Negative Secondary Ions

A procedure has been established to define the interface position in depth profiles accurately when using secondary ion mass spectrometry and the negative secondary ions. The interface position varies strongly with the extent of the matrix effect and so depends on the secondary ion measured. Intensi...

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Detalles Bibliográficos
Autores principales:	Havelund, R., Seah, M. P., Tiddia, M., Gilmore, I. S.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2018
Materias:	Research Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5889422/ https://www.ncbi.nlm.nih.gov/pubmed/29468500 http://dx.doi.org/10.1007/s13361-018-1905-2

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