Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scal...

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Detalles Bibliográficos
Autores principales: Timm, Rainer, Head, Ashley R., Yngman, Sofie, Knutsson, Johan V., Hjort, Martin, McKibbin, Sarah R., Troian, Andrea, Persson, Olof, Urpelainen, Samuli, Knudsen, Jan, Schnadt, Joachim, Mikkelsen, Anders
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5897406/
https://www.ncbi.nlm.nih.gov/pubmed/29651110
http://dx.doi.org/10.1038/s41467-018-03855-z

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