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High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are...

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Detalles Bibliográficos
Autores principales: Kwon, Sung Min, Won, Jong Kook, Jo, Jeong-Wan, Kim, Jaehyun, Kim, Hee-Joong, Kwon, Hyuck-In, Kim, Jaekyun, Ahn, Sangdoo, Kim, Yong-Hoon, Lee, Myoung-Jae, Lee, Hyung-ik, Marks, Tobin J., Kim, Myung-Gil, Park, Sung Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5898846/
https://www.ncbi.nlm.nih.gov/pubmed/29662951
http://dx.doi.org/10.1126/sciadv.aap9104
Descripción
Sumario:We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are easily transformed into the corresponding high-performance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQ(x): M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In(2)Se(3) active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm(2) V(−1) s(−1) with an on/off current ratio of >10(7) and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition, metal chalcogenide–based phototransistors with a photodetectivity of >10(13) Jones and seven-stage ring oscillators operating at a speed of ~2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated.