Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions

Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resi...

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Detalles Bibliográficos
Autores principales: Jia, Caihong, Li, Jiachen, Yang, Guang, Chen, Yonghai, Zhang, Weifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899076/
https://www.ncbi.nlm.nih.gov/pubmed/29654517
http://dx.doi.org/10.1186/s11671-018-2513-6
Descripción
Sumario:Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10(5) ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO(3)/Nb:SrTiO(3) heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

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