Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions

Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resi...

Descripción completa

Detalles Bibliográficos
Autores principales: Jia, Caihong, Li, Jiachen, Yang, Guang, Chen, Yonghai, Zhang, Weifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899076/
https://www.ncbi.nlm.nih.gov/pubmed/29654517
http://dx.doi.org/10.1186/s11671-018-2513-6
_version_ 1783314221520388096
author Jia, Caihong
Li, Jiachen
Yang, Guang
Chen, Yonghai
Zhang, Weifeng
author_facet Jia, Caihong
Li, Jiachen
Yang, Guang
Chen, Yonghai
Zhang, Weifeng
author_sort Jia, Caihong
collection PubMed
description Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10(5) ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO(3)/Nb:SrTiO(3) heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
format Online
Article
Text
id pubmed-5899076
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-58990762018-04-27 Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions Jia, Caihong Li, Jiachen Yang, Guang Chen, Yonghai Zhang, Weifeng Nanoscale Res Lett Nano Express Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10(5) ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO(3)/Nb:SrTiO(3) heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions. Springer US 2018-04-13 /pmc/articles/PMC5899076/ /pubmed/29654517 http://dx.doi.org/10.1186/s11671-018-2513-6 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Jia, Caihong
Li, Jiachen
Yang, Guang
Chen, Yonghai
Zhang, Weifeng
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title_full Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title_fullStr Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title_full_unstemmed Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title_short Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
title_sort ferroelectric field effect induced asymmetric resistive switching effect in batio(3)/nb:srtio(3) epitaxial heterojunctions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899076/
https://www.ncbi.nlm.nih.gov/pubmed/29654517
http://dx.doi.org/10.1186/s11671-018-2513-6
work_keys_str_mv AT jiacaihong ferroelectricfieldeffectinducedasymmetricresistiveswitchingeffectinbatio3nbsrtio3epitaxialheterojunctions
AT lijiachen ferroelectricfieldeffectinducedasymmetricresistiveswitchingeffectinbatio3nbsrtio3epitaxialheterojunctions
AT yangguang ferroelectricfieldeffectinducedasymmetricresistiveswitchingeffectinbatio3nbsrtio3epitaxialheterojunctions
AT chenyonghai ferroelectricfieldeffectinducedasymmetricresistiveswitchingeffectinbatio3nbsrtio3epitaxialheterojunctions
AT zhangweifeng ferroelectricfieldeffectinducedasymmetricresistiveswitchingeffectinbatio3nbsrtio3epitaxialheterojunctions

Ejemplares similares