Cargando…
Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO(3)/Nb:SrTiO(3) Epitaxial Heterojunctions
Asymmetric resistive switching processes were observed in BaTiO(3)/Nb:SrTiO(3) epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resi...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899076/ https://www.ncbi.nlm.nih.gov/pubmed/29654517 http://dx.doi.org/10.1186/s11671-018-2513-6 |