Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

We study the effects of annealing on (Ga(0.64),In(0.36)) (N(0.045),As(0.955)) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observe...

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Detalles Bibliográficos
Autores principales: Ishikawa, Fumitaro, Higashi, Kotaro, Fuyuno, Satoshi, Morifuji, Masato, Kondow, Masahiko, Trampert, Achim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899128/
https://www.ncbi.nlm.nih.gov/pubmed/29654243
http://dx.doi.org/10.1038/s41598-018-23941-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5899128/
https://www.ncbi.nlm.nih.gov/pubmed/29654243
http://dx.doi.org/10.1038/s41598-018-23941-y

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