Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these devices. We also show that...

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Detalles Bibliográficos
Autores principales: Ameen, Tarek A, Ilatikhameneh, Hesameddin, Tankasala, Archana, Hsueh, Yuling, Charles, James, Fonseca, Jim, Povolotskyi, Michael, Kim, Jun Oh, Krishna, Sanjay, Allen, Monica S, Allen, Jeffery W, Rahman, Rajib, Klimeck, Gerhard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5905245/
https://www.ncbi.nlm.nih.gov/pubmed/29719758
http://dx.doi.org/10.3762/bjnano.9.99

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