Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent p...

Descripción completa

Detalles Bibliográficos
Autores principales: Tan, Qiuhong, Wang, Qianjin, Liu, Yingkai, Yan, Hailong, Cai, Wude, Yang, Zhikun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5919893/
https://www.ncbi.nlm.nih.gov/pubmed/29700706
http://dx.doi.org/10.1186/s11671-018-2534-1
Descripción
Sumario:Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO(2) defect control layer shows a low leakage current density of 3.1 × 10(−9) A/cm(2) at a gate voltage of − 3 V.

Ejemplares similares