Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent p...

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Autores principales: Tan, Qiuhong, Wang, Qianjin, Liu, Yingkai, Yan, Hailong, Cai, Wude, Yang, Zhikun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5919893/
https://www.ncbi.nlm.nih.gov/pubmed/29700706
http://dx.doi.org/10.1186/s11671-018-2534-1
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author Tan, Qiuhong
Wang, Qianjin
Liu, Yingkai
Yan, Hailong
Cai, Wude
Yang, Zhikun
author_facet Tan, Qiuhong
Wang, Qianjin
Liu, Yingkai
Yan, Hailong
Cai, Wude
Yang, Zhikun
author_sort Tan, Qiuhong
collection PubMed
description Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO(2) defect control layer shows a low leakage current density of 3.1 × 10(−9) A/cm(2) at a gate voltage of − 3 V.
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spelling pubmed-59198932018-05-01 Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer Tan, Qiuhong Wang, Qianjin Liu, Yingkai Yan, Hailong Cai, Wude Yang, Zhikun Nanoscale Res Lett Nano Express Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)(4)Ti(3)O(12) films as insulator, and HfO(2) films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO(2) defect control layer shows a low leakage current density of 3.1 × 10(−9) A/cm(2) at a gate voltage of − 3 V. Springer US 2018-04-27 /pmc/articles/PMC5919893/ /pubmed/29700706 http://dx.doi.org/10.1186/s11671-018-2534-1 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Tan, Qiuhong
Wang, Qianjin
Liu, Yingkai
Yan, Hailong
Cai, Wude
Yang, Zhikun
Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title_full Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title_fullStr Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title_full_unstemmed Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title_short Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
title_sort single-walled carbon nanotube dominated micron-wide stripe patterned-based ferroelectric field-effect transistors with hfo(2) defect control layer
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5919893/
https://www.ncbi.nlm.nih.gov/pubmed/29700706
http://dx.doi.org/10.1186/s11671-018-2534-1
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