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Effects of N(2) Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy

GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N(2) working gas with a small amount of...

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Detalles Bibliográficos
Autores principales:	Junaid, Muhammad, Hsiao, Ching-Lien, Chen, Yen-Ting, Lu, Jun, Palisaitis, Justinas, Persson, Per Ola Åke, Hultman, Lars, Birch, Jens
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5923553/ https://www.ncbi.nlm.nih.gov/pubmed/29642435 http://dx.doi.org/10.3390/nano8040223

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