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A modular synthetic approach for band-gap engineering of armchair graphene nanoribbons

Despite the great promise of armchair graphene nanoribbons (aGNRs) as high-performance semiconductors, practical band-gap engineering of aGNRs remains an unmet challenge. Given that width and edge structures are the two key factors for modulating band-gaps of aGNRs, a reliable synthetic method that...

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Detalles Bibliográficos
Autores principales: Li, Gang, Yoon, Ki-Young, Zhong, Xinjue, Wang, Jianchun, Zhang, Rui, Guest, Jeffrey R., Wen, Jianguo, Zhu, X.-Y., Dong, Guangbin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5924368/
https://www.ncbi.nlm.nih.gov/pubmed/29703958
http://dx.doi.org/10.1038/s41467-018-03747-2
Descripción
Sumario:Despite the great promise of armchair graphene nanoribbons (aGNRs) as high-performance semiconductors, practical band-gap engineering of aGNRs remains an unmet challenge. Given that width and edge structures are the two key factors for modulating band-gaps of aGNRs, a reliable synthetic method that allows control of both factors would be highly desirable. Here we report a simple modular strategy for efficient preparation of N = 6 aGNR, the narrowest member in the N = 3p (p: natural number) aGNR family, and two unsymmetrically edge-functionalized GNRs that contain benzothiadiazole and benzotriazole moieties. The trend of band-gap transitions among these GNRs parallels those in donor–acceptor alternating conjugated polymers. In addition, post-functionalization of the unsymmetrical heterocyclic edge via C–H borylation permits further band-gap tuning. Therefore, this method opens the door for convenient band-gap engineering of aGNRs through modifying the heteroarenes on the edge.