Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

[Image: see text] We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al(2)O(3)–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are...

Descripción completa

Detalles Bibliográficos
Autores principales: Martin, Marie-Blandine, Dlubak, Bruno, Weatherup, Robert S., Yang, Heejun, Deranlot, Cyrile, Bouzehouane, Karim, Petroff, Frédéric, Anane, Abdelmadjid, Hofmann, Stephan, Robertson, John, Fert, Albert, Seneor, Pierre
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5926530/
https://www.ncbi.nlm.nih.gov/pubmed/24988469
http://dx.doi.org/10.1021/nn5017549

Ejemplares similares

Ejemplares similares