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Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog

The search for room temperature quantum spin Hall insulators (QSHIs) based on widely available materials and a controlled manufacturing process is one of the major challenges of today’s topological physics. We propose a new class of semiconductor systems based on multilayer broken-gap quantum wells,...

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Detalles Bibliográficos
Autores principales: Krishtopenko, Sergey S., Teppe, Frédéric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5930414/
https://www.ncbi.nlm.nih.gov/pubmed/29725617
http://dx.doi.org/10.1126/sciadv.aap7529
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author Krishtopenko, Sergey S.
Teppe, Frédéric
author_facet Krishtopenko, Sergey S.
Teppe, Frédéric
author_sort Krishtopenko, Sergey S.
collection PubMed
description The search for room temperature quantum spin Hall insulators (QSHIs) based on widely available materials and a controlled manufacturing process is one of the major challenges of today’s topological physics. We propose a new class of semiconductor systems based on multilayer broken-gap quantum wells, in which the QSHI gap reaches 60 meV and remains insensitive to temperature. Depending on their layer thicknesses and geometry, these novel structures also host a graphene-like phase and a bilayer graphene analog. Our theoretical results significantly extend the application potential of topological materials based on III–V semiconductors.
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spelling pubmed-59304142018-05-03 Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog Krishtopenko, Sergey S. Teppe, Frédéric Sci Adv Research Articles The search for room temperature quantum spin Hall insulators (QSHIs) based on widely available materials and a controlled manufacturing process is one of the major challenges of today’s topological physics. We propose a new class of semiconductor systems based on multilayer broken-gap quantum wells, in which the QSHI gap reaches 60 meV and remains insensitive to temperature. Depending on their layer thicknesses and geometry, these novel structures also host a graphene-like phase and a bilayer graphene analog. Our theoretical results significantly extend the application potential of topological materials based on III–V semiconductors. American Association for the Advancement of Science 2018-04-20 /pmc/articles/PMC5930414/ /pubmed/29725617 http://dx.doi.org/10.1126/sciadv.aap7529 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Krishtopenko, Sergey S.
Teppe, Frédéric
Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title_full Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title_fullStr Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title_full_unstemmed Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title_short Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog
title_sort quantum spin hall insulator with a large bandgap, dirac fermions, and bilayer graphene analog
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5930414/
https://www.ncbi.nlm.nih.gov/pubmed/29725617
http://dx.doi.org/10.1126/sciadv.aap7529
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