Scandium doping brings speed improvement in Sb(2)Te alloy for phase change random access memory application

Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change mat...

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Detalles Bibliográficos
Autores principales: Chen, Xin, Zheng, Yonghui, Zhu, Min, Ren, Kun, Wang, Yong, Li, Tao, Liu, Guangyu, Guo, Tianqi, Wu, Lei, Liu, Xianqiang, Cheng, Yan, Song, Zhitang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5931567/
https://www.ncbi.nlm.nih.gov/pubmed/29717216
http://dx.doi.org/10.1038/s41598-018-25215-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5931567/
https://www.ncbi.nlm.nih.gov/pubmed/29717216
http://dx.doi.org/10.1038/s41598-018-25215-z

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