Cargando…
Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires
Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e...
Autores principales: | Yang, Zai-xing, Yin, Yanxue, Sun, Jiamin, Bian, Luozhen, Han, Ning, Zhou, Ziyao, Shu, Lei, Wang, Fengyun, Chen, Yunfa, Song, Aimin, Ho, Johnny C. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5932019/ https://www.ncbi.nlm.nih.gov/pubmed/29720609 http://dx.doi.org/10.1038/s41598-018-25209-x |
Ejemplares similares
-
Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
por: Jiang, Nian, et al.
Publicado: (2020) -
Nonpolar GaAs Nanowires Catalyzed by Cu(5)As(2): Insights into As Layer Epitaxy
por: Wang, Hang, et al.
Publicado: (2020) -
Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method
por: Wang, Ying, et al.
Publicado: (2016) -
Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016) -
GaAs nanopillar-array solar cells employing in situ surface passivation
por: Mariani, Giacomo, et al.
Publicado: (2013)