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CuI p-type thin films for highly transparent thermoelectric p-n modules

Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in or...

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Detalles Bibliográficos
Autores principales: Morais Faustino, Bruno Miguel, Gomes, Diogo, Faria, Jaime, Juntunen, Taneli, Gaspar, Guilherme, Bianchi, Catarina, Almeida, António, Marques, Ana, Tittonen, Ilkka, Ferreira, Isabel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5932081/
https://www.ncbi.nlm.nih.gov/pubmed/29720663
http://dx.doi.org/10.1038/s41598-018-25106-3
Descripción
Sumario:Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10(4) Sm(−1)) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.