Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches...

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Detalles Bibliográficos
Autores principales: Pozina, Galia, Gubaydullin, Azat R., Mitrofanov, Maxim I., Kaliteevski, Mikhail A., Levitskii, Iaroslav V., Voznyuk, Gleb V., Tatarinov, Evgeniy E., Evtikhiev, Vadim P., Rodin, Sergey N., Kaliteevskiy, Vasily N., Chechurin, Leonid S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5940688/
https://www.ncbi.nlm.nih.gov/pubmed/29740066
http://dx.doi.org/10.1038/s41598-018-25647-7

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