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Observation of negative differential resistance in mesoscopic graphene oxide devices

The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process...

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Autores principales: Rathi, Servin, Lee, Inyeal, Kang, Moonshik, Lim, Dongsuk, Lee, Yoontae, Yamacli, Serhan, Joh, Han-Ik, Kim, Seongsu, Kim, Sang-Woo, Yun, Sun Jin, Choi, Sukwon, Kim, Gil-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5940784/
https://www.ncbi.nlm.nih.gov/pubmed/29739956
http://dx.doi.org/10.1038/s41598-018-22355-0
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author Rathi, Servin
Lee, Inyeal
Kang, Moonshik
Lim, Dongsuk
Lee, Yoontae
Yamacli, Serhan
Joh, Han-Ik
Kim, Seongsu
Kim, Sang-Woo
Yun, Sun Jin
Choi, Sukwon
Kim, Gil-Ho
author_facet Rathi, Servin
Lee, Inyeal
Kang, Moonshik
Lim, Dongsuk
Lee, Yoontae
Yamacli, Serhan
Joh, Han-Ik
Kim, Seongsu
Kim, Sang-Woo
Yun, Sun Jin
Choi, Sukwon
Kim, Gil-Ho
author_sort Rathi, Servin
collection PubMed
description The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators.
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spelling pubmed-59407842018-05-11 Observation of negative differential resistance in mesoscopic graphene oxide devices Rathi, Servin Lee, Inyeal Kang, Moonshik Lim, Dongsuk Lee, Yoontae Yamacli, Serhan Joh, Han-Ik Kim, Seongsu Kim, Sang-Woo Yun, Sun Jin Choi, Sukwon Kim, Gil-Ho Sci Rep Article The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators. Nature Publishing Group UK 2018-05-08 /pmc/articles/PMC5940784/ /pubmed/29739956 http://dx.doi.org/10.1038/s41598-018-22355-0 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Rathi, Servin
Lee, Inyeal
Kang, Moonshik
Lim, Dongsuk
Lee, Yoontae
Yamacli, Serhan
Joh, Han-Ik
Kim, Seongsu
Kim, Sang-Woo
Yun, Sun Jin
Choi, Sukwon
Kim, Gil-Ho
Observation of negative differential resistance in mesoscopic graphene oxide devices
title Observation of negative differential resistance in mesoscopic graphene oxide devices
title_full Observation of negative differential resistance in mesoscopic graphene oxide devices
title_fullStr Observation of negative differential resistance in mesoscopic graphene oxide devices
title_full_unstemmed Observation of negative differential resistance in mesoscopic graphene oxide devices
title_short Observation of negative differential resistance in mesoscopic graphene oxide devices
title_sort observation of negative differential resistance in mesoscopic graphene oxide devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5940784/
https://www.ncbi.nlm.nih.gov/pubmed/29739956
http://dx.doi.org/10.1038/s41598-018-22355-0
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