Cargando…
Computational exploration of two-dimensional silicon diarsenide and germanium arsenide for photovoltaic applications
The properties of bulk compounds required to be suitable for photovoltaic applications, such as excellent visible light absorption, favorable exciton formation, and charge separation are equally essential for two-dimensional (2D) materials. Here, we systematically study 2D group IV–V compounds such...
Autores principales: | Matta, Sri Kasi, Zhang, Chunmei, Jiao, Yalong, O'Mullane, Anthony, Du, Aijun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5942365/ https://www.ncbi.nlm.nih.gov/pubmed/29765802 http://dx.doi.org/10.3762/bjnano.9.116 |
Ejemplares similares
-
Free-radical gases on two-dimensional transition-metal disulfides (XS(2), X = Mo/W): robust half-metallicity for efficient nitrogen oxide sensors
por: Zhang, Chunmei, et al.
Publicado: (2018) -
Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results
por: Ossicini, Stefano, et al.
Publicado: (2010) -
In-plane anisotropic third-harmonic generation from germanium arsenide thin flakes
por: Sar, Huseyin, et al.
Publicado: (2020) -
Observation
of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors
por: Grillo, Alessandro, et al.
Publicado: (2020) -
What do the narratives tell us? Exploring the implementation of the Athena SWAN Ireland Charter
por: O'Mullane, Monica
Publicado: (2023)