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Synthesis of high quality two-dimensional materials via chemical vapor deposition
Two-dimensional (2D) materials have attracted much attention due to their unique properties and great potential in various applications. Controllable synthesis of 2D materials with high quality and high efficiency is essential for their large scale applications. Chemical vapor deposition (CVD) has b...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5950838/ https://www.ncbi.nlm.nih.gov/pubmed/29861920 http://dx.doi.org/10.1039/c5sc01941a |
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author | Yu, Jingxue Li, Jie Zhang, Wenfeng Chang, Haixin |
author_facet | Yu, Jingxue Li, Jie Zhang, Wenfeng Chang, Haixin |
author_sort | Yu, Jingxue |
collection | PubMed |
description | Two-dimensional (2D) materials have attracted much attention due to their unique properties and great potential in various applications. Controllable synthesis of 2D materials with high quality and high efficiency is essential for their large scale applications. Chemical vapor deposition (CVD) has been one of the most important and reliable techniques for the synthesis of 2D materials. In this perspective, the recent advances in the CVD growth of three typical types of two-dimensional materials, graphene, boron nitride and transition metal dichalcogenides (TMDs), are briefly introduced. Large area preparation, single crystal growth and some mechanistic insight are discussed with details. Finally we give a brief comment on the challenges of CVD growth of 2D materials. |
format | Online Article Text |
id | pubmed-5950838 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-59508382018-06-01 Synthesis of high quality two-dimensional materials via chemical vapor deposition Yu, Jingxue Li, Jie Zhang, Wenfeng Chang, Haixin Chem Sci Chemistry Two-dimensional (2D) materials have attracted much attention due to their unique properties and great potential in various applications. Controllable synthesis of 2D materials with high quality and high efficiency is essential for their large scale applications. Chemical vapor deposition (CVD) has been one of the most important and reliable techniques for the synthesis of 2D materials. In this perspective, the recent advances in the CVD growth of three typical types of two-dimensional materials, graphene, boron nitride and transition metal dichalcogenides (TMDs), are briefly introduced. Large area preparation, single crystal growth and some mechanistic insight are discussed with details. Finally we give a brief comment on the challenges of CVD growth of 2D materials. Royal Society of Chemistry 2015-12-01 2015-08-03 /pmc/articles/PMC5950838/ /pubmed/29861920 http://dx.doi.org/10.1039/c5sc01941a Text en This journal is © The Royal Society of Chemistry 2015 http://creativecommons.org/licenses/by-nc/3.0/ This article is freely available. This article is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported Licence (CC BY-NC 3.0) |
spellingShingle | Chemistry Yu, Jingxue Li, Jie Zhang, Wenfeng Chang, Haixin Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title | Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title_full | Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title_fullStr | Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title_full_unstemmed | Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title_short | Synthesis of high quality two-dimensional materials via chemical vapor deposition |
title_sort | synthesis of high quality two-dimensional materials via chemical vapor deposition |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5950838/ https://www.ncbi.nlm.nih.gov/pubmed/29861920 http://dx.doi.org/10.1039/c5sc01941a |
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